Which of the following is true of p-type semiconductors?

In p-type semiconductors, the term "p-type" refers to the presence of "holes" as the majority charge carriers, created when a semiconductor is doped with specific materials. This doping involves adding elements that have fewer valence electrons than the semiconductor material, such as silicon, which has four.

When elements like boron, which has three valence electrons, are introduced, they create holes in the crystal lattice where an electron would typically exist. As a result, when an electric field is applied to a p-type semiconductor, the holes move towards the negative pole, but effectively they create a positive charge effect wherever they exist. This forms what can be termed a positive pole in the context of semiconductor behavior.

Therefore, the statement regarding the formation of a positive pole when an electric field is applied accurately reflects the behavior of p-type semiconductors, emphasizing their nature of facilitating charge transport through holes rather than excess electrons.